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CNY75A/B/C/GA/GB/GC
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
B 6 C 5 E 4
* Isolation materials according to UL94-VO * Pollution degree IEC 60664) 2 (DIN/VDE 0110/resp.
* Climatic classification 55/100/21 (IEC 60068 part 1)
1 2 3 A (+) C (-) NC
* Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection * Low temperature coefficient of CTR
V
DE
17186
* CTR offered in 3 groups * Rated isolation voltage (RMS VIOWM = 600 VRMS (848 V peak) * Rated recurring VIORM = 600 VRMS peak voltage includes DC)
voltage (transient
(repetitive) overvoltage)
DESCRIPTION
The CNY75A/B/C/GA/GB/GC consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6 pin plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.
* Rated impulse VIOTM = 6 kVpeak
* Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV * Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI 275 * Thickness through insulation 0.75 mm * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VDE STANDARDS
These couplers perform safety functions according to the following equipment standards: * DIN EN 60747-5-5 Optocoupler for electrical safety requirements * IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage 400 VRMS) * VDE 0804 Telecommunication apparatus and data processing * IEC 60065 Safety for mains-operated household apparatus electronic and related
APPLICATIONS
* Switch-mode power supplies * Line receiver * Computer peripheral interface * Microprocessor system interface * Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage 300 V - for appl. class I - III at mains voltage 600 V according to DIN EN 60747-5-5.
AGENCY APPROVALS
* UL1577, file no. E76222 system code A, double protection * BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), certificate number 7081 and 7402 * DIN EN 60747-5-5 * FIMKO (SETI): EN 60950, certificate no. 12399
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83536 Rev. 1.7, 08-May-08
CNY75A/B/C/GA/GB/GC
Optocoupler, Phototransistor Output, with Base Connection
ORDER INFORMATION
PART CNY75A CNY75B CNY75C CNY75GA CNY75GB CNY75GC Note G = leadform 10.16 mm; G is not marked on the body. REMARKS CTR 63 to 125 %, DIP-6 CTR 100 to 200 %, DIP-6 CTR 160 to 320 %, DIP-6 CTR 63 to 125 %, DIP-6 CTR 100 to 200 %, DIP-6 CTR 160 to 320 %, DIP-6
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER INPUT Reverse voltage Forward current Forward surge current Power dissipation Junction temperature OUTPUT Collector base voltage Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature COUPLER AC isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature (2)
(1)
TEST CONDITION
SYMBOL VR IF
VALUE 5.0 60 3.0 100 125 90 90 7.0 50 100 150 125 3750 250 - 55 to + 100 - 55 to + 125 260
UNIT V mA A mW C V V V mA mA mW C VRMS mW C C C
tp 10 s
IFSM Pdiss Tj VCBO VCEO VECO IC
tp/T = 0.5, tp 10 ms
ICM Pdiss Tj
t = 1 min
VISO Ptot Tamb Tstg
2 mm from case, t 10 s
Tsld
Note (1) T amb = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTCS
PARAMETER INPUT Forward voltage Reverse current Junction capacitance IF = 50 mA VR = 6 V VR = 0 V, f = 1 MHz VF IR Cj 50 1.25 1.6 10 V A pF TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Document Number: 83536 Rev. 1.7, 08-May-08
For technical questions, contact: optocoupler.answers@vishay.com
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CNY75A/B/C/GA/GB/GC
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
ELECTRICAL CHARACTERISTCS
PARAMETER OUTPUT Collector base voltage Collector emitter voltage Emitter collector voltage Collector emitter leakage current COUPLER Collector emitter saturation voltage Cut-off frequency Coupling capacitance IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 f = 1 MHz VCEsat fc Ck 110 0.3 0.3 V kHz pF IC = 100 A IC = 1 mA IE = 100 A VCE = 20 V, IF = 0 A VCBO VCEO VECO ICEO 90 90 7 150 V V V nA TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Note Tamb = 25 C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION VCE = 5 V, IF = 1 mA IC/IF VCE = 5 V, IF = 10 mA PART CNY75GA CNY75GB CNY75GC CNY75GA CNY75GB CNY75GC SYMBOL CTR CTR CTR CTR CTR CTR MIN. 15 30 60 63 100 160 125 200 320 TYP. MAX. UNIT % % % % % %
SWITCHING CHARACTERISTICS
PARAMETER Current time TEST CONDITION VCC = 5 V, RL = 100 (see figure 3) VCC = 5 V, RL = 100 (see figure 3) VCC = 5 V, RL = 100 (see figure 3) VCC = 5 V, RL = 100 (see figure 3) VCC = 5 V, RL = 100 (see figure 3) VCC = 5 V, RL = 100 (see figure 3) VCC = 5 V, RL = 100 (see figure 3) PART CNY75GA CNY75GB CNY75GC CNY75GA CNY75GB CNY75GC CNY75GA CNY75GB CNY75GC CNY75GA CNY75GB CNY75GC CNY75GA CNY75GB CNY75GC CNY75GA CNY75GB CNY75GC CNY75GA CNY75GB CNY75GC Turn-off time Turn-on time Storage time Fall time Rise time Delay time SYMBOL IF IF IF td td td tr tr tr tf tf tf ts ts ts ton ton ton toff toff toff MIN TYP. 10 10 10 2 2.5 2.8 2.5 3 4.2 2.7 3.7 4.7 0.3 0.3 0.3 4.5 5.5 7 3 4 5 MAX UNIT mA mA mA s s s s s s s s s s s s s s s s s s
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Document Number: 83536 Rev. 1.7, 08-May-08
CNY75A/B/C/GA/GB/GC
Optocoupler, Phototransistor Output, with Base Connection
SWITCHING CHARACTERISTICS
PARAMETER Turn-on time TEST CONDITION VCC = 5 V, RL = 1 k (see figure 4) PART CNY75GA CNY75GB CNY75GC CNY75GA Turn-off time VCC = 5 V, RL = 1 k (see figure 4) CNY75GB CNY75GC SYMBOL ton ton ton toff toff toff MIN TYP. 10 16.5 11 25 20 37.5 MAX UNIT s s s s s s
Vishay Semiconductors
MAXIMUM SAFETY RATINGS
PARAMETER INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature VIOTM Tsi 6 150 kV C Pdiss 265 mW IF 130 mA TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Note According DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
PARAMETER Partial discharge test voltage routine test Partial discharge test voltage lot test (sample test) TEST CONDITION 100 %, ttest = 1 s tTr = 60 s, ttest = 10 s, (see figure 2) VIO = 500 V Insulation resistance VIO = 500 V, Tamb 100 C VIO = 500 V, Tamb 150 C (construction test only) SYMBOL Vpd VIOTM Vpd RIO RIO RIO MIN. 1.6 6.0 1.3 1012 1011 109 TYP. MAX. UNIT kV kV kV
P - Total Power Dissipation (mW) tot
275 250 225 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 Isi (mA) Psi (mW)
VIOTM t1, t2 t3 , t4 ttest tstres VPd VIOWM VIORM = 1 to 10 s =1s = 10 s = 12 s
0
t3 ttest t4 t1 tTr = 60 s t2 t stres t
95 10923
Tamb - Ambient Temperature (C)
Fig. 1 - Derating Diagram
13930
Fig. 2 - Test Pulse Diagram for Sample Test according to DIN EN 60747-5-5/DIN EN 60747-; IEC60747
Document Number: 83536 Rev. 1.7, 08-May-08
For technical questions, contact: optocoupler.answers@vishay.com
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CNY75A/B/C/GA/GB/GC
Vishay Semiconductors
TYPICAL CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
Optocoupler, Phototransistor Output, with Base Connection
Ptot - Total Power Dissipation (mW)
300 Coupled device 250 200 Phototransistor 150 100 50 0 0 40 80 120 IR-diode
10000
ICEO - Collector Dark Current, with Open Base (nA)
VCE = 30 V IF = 0 1000
100
10
1 0
95 11038
25
50
75
100
96 11700
Tamb - Ambient Temperature (C)
Tamb - Ambient Temperature (C)
Fig. 3 - Total Power Dissipation vs. Ambient Temperature
Fig. 6 - Collector Dark Current vs. Ambient Temperature
1000 ICB - Collector Base Current (mA)
1 VCB = 5 V 0.1
IF - Forward Current (mA)
100
10
0.01
1
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
0.001 1
95 11039
10 I F - Forward Current (mA)
100
VF - Forward Voltage (V)
Fig. 7 - Collector Base Current vs. Forward Current Fig. 4 - Forward Current vs. Forward Voltage
CTR rel - Relative Current Transfer Ratio
1.5 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80
100
I C - Collector Current (mA)
1.4
VCE = 5 V I F = 10 mA
VCE = 5 V 10
1
0.1
0.01 0.1
95 11040
1
10
100
96 11918
Tamb - Ambient Temperature (C)
IF - Forward Current (mA)
Fig. 5 - Relative Current Transfer Ratio vs. Ambient Temperature
Fig. 8 - Collector Current vs. Forward Current
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Document Number: 83536 Rev. 1.7, 08-May-08
CNY75A/B/C/GA/GB/GC
Optocoupler, Phototransistor Output, with Base Connection
Vishay Semiconductors
100
1.0 I F = 50 mA CTR = 50 % used
I C - Collector Current (mA)
VCEsat - Collector Emitter Saturation Voltage (V)
20 mA 10 10 mA 5 mA 1
0.8 CNY75A used 0.6
0.4 20 % used 0.2 10 % used 0 1
95 11034
2 mA 1 mA CNY75A
0.1 0.1
95 11041
1
10
100
10
100
VCE - Collector Emitter Voltage (V)
I C - Collector Current (mA)
Fig. 9 - Collector Current vs. Collector Emitter Voltage
Fig. 12 - Collector Emitter Saturation Voltage vs. Collector Current
VCEsat - Collector Emitter Saturation Voltage (V)
100
1.0 CTR = 50 % 0.8 CNY75B 0.6 20 %
I C - Collector Current (mA)
I F = 50 mA 20 mA
10
10 mA 5 mA
1
2 mA 1 mA
0.4 0.2 0 1
95 11043
10 %
0.1 0.1
95 11042
CNY75B
1 10 100
10
100
VCE - Collector Emitter Voltage (V)
IC - Collector Current (mA)
Fig. 10 - Collector Current vs. Collector Emitter Voltage
Fig. 13 - Collector Emitter Saturation Voltage vs. Collector Current
VCEsat - Collector Emitter Saturation Voltage (V)
100.0 I F = 50 mA
1.0 CTR = 50 % 0.8 CNY75C 0.6
I C - Collector Current (mA)
20 mA 10 mA
10.0 5 mA 2 mA 1.0 1 mA CNY75C 0.1 0.1 1.0 10.0 100.0
0.4 0.2 20 % 10 % 0 1
95 11044
10
100
96 11919
VCE - Collector Emitter Voltage (V)
IC - Collector Current (mA)
Fig. 11 - Collector Current vs. Collector Emitter Voltage
Fig. 14 - Collector Emitter Saturation Voltage vs. Collector Current
Document Number: 83536 Rev. 1.7, 08-May-08
For technical questions, contact: optocoupler.answers@vishay.com
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CNY75A/B/C/GA/GB/GC
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
VCE = 5 V
CTR - Current Transfer Ratio (%)
1000
1000 CNY75C(G) VCE = 5 V 100
hFE - DC Current Gain
800
600
400 200 0 0.01
10
1 0.1 1 10 100
0.1
1
10
100
95 11046
95 11035
IC - Collector Current (mA)
IF - Forward Current (mA)
Fig. 15 - DC Current Gain vs. Collector Current
Fig. 18 - Current Transfer Ratio vs. Forward Current
CNY75A(G) VCE = 5 V 100
t on /toff - Turn-on/Turn-off Time (s)
CTR - Current Transfer Ratio (%)
1000
50 CNY75A(G) Saturated operation VS = 5 V R L = 1 k toff 20 10 0 0 5 10 15 20
40
30
10
ton
1 0.1 1 10 100
95 11036
IF - Forward Current (mA)
95 11033
IF - Forward Current (mA)
Fig. 16 - Current Transfer Ratio vs. Forward Current
Fig. 19 - Turn-on/off Time vs. Forward Current
CNY75B(G) VCE = 5 V
t on / toff - Turn-on/Turn-off Time (s)
CTR - Current Transfer Ratio (%)
1000
50 CNY75B(G) Saturated operation VS = 5 V R L = 1 k toff 20 10 ton 0 0 5 10 15 20
40
100
30
10
1 0.1 1 10 100
95 11045
IF - Forward Current (mA)
95 11048
IF - Forward Current (mA)
Fig. 17 - Current Transfer Ratio vs. Forward Current
Fig. 20 - Turn-on/off Time vs. Forward Current
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83536 Rev. 1.7, 08-May-08
CNY75A/B/C/GA/GB/GC
Optocoupler, Phototransistor Output, with Base Connection
Vishay Semiconductors
t on /t off - Turn-on/Turn-off Time (s)
50 CNY75C(G) Saturated operation VS = 5 V R L = 1 k toff
t on /t off - Turn-on/Turn-off Time (s)
20 CNY75C(G) Non-saturated operation VS = 5 V R L = 100
40 30
15 ton 10 toff 5
20 10 ton 0 0 5 10 15 20
0 0 2 4 6 8 10
95 11050
IF - Forward Current (mA)
95 11049
IC - Collector Current (mA)
Fig. 21 - Turn-on/off Time vs. Forward Current
Fig. 24 - Turn-on/off Time vs. Collector Current
t on /t off - Turn-on/Turn-off Time (s)
20 CNY75A(G) Non-saturated operation VS = 5 V R L = 100
Customer code/ identification/ option
15 ton 10 toff 5
XXXXX XXXXX
Product code
V DE
VDE logo
UL logo
V XXXY 63
Plant code Package code Date code (year, week)
0 0 2 4 6 8 10
Vishay logo
17936
95 11032
IC - Collector Current (mA)
Fig. 25 - Marking Example
Fig. 22 - Turn-on/off Time vs. Collector Current
t on /t off - Turn-on/Turn-off Time (s)
20 CNY75B(G) Non-saturated operation VS = 5 V R L = 100
15
10 ton 5 toff 0 0 2 4 6 8 10
95 11047
IC - Collector Current (mA)
Fig. 23 - Turn-on/off Time vs. Collector Current
Document Number: 83536 Rev. 1.7, 08-May-08
For technical questions, contact: optocoupler.answers@vishay.com
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CNY75A/B/C/GA/GB/GC
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
PACKAGE DIMENSIONS in millimeters
8.8 max. 7.62 0.1 0.3 A 4.2 0.1 8.6 max. B 6.4 max. 0.5 min. 3.3 0.58 max. 1.54 2.54 nom. A 654 5.08 nom. Weight: ca. 0.50 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board
0.3 max.
9 0.6
0.4 B
technical drawings according to DIN specifications
14770
123
8.8 max. 7.62 0.1 0.3 A 4.2 0.1 8.6 max. B 6.4 max. 0.5 min.
0.58 max. 1.54 2.54 nom. A 6 5 4 5.08 nom.
0.3 max. 10.16 0.2 0.4 B
Weight: ca. 0.50 g Creepage distance: > 8 mm Air path: > 8 mm after mounting on PC board
technical drawings according to DIN specifications
123
14771
5.08 max.
3.3
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83536 Rev. 1.7, 08-May-08
CNY75A/B/C/GA/GB/GC
Optocoupler, Phototransistor Output, with Base Connection
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
Vishay Semiconductors
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 83536 Rev. 1.7, 08-May-08
For technical questions, contact: optocoupler.answers@vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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